Euv Lithography Mask

Euv Lithography Mask

In unidirectional metal layers, tip-to-tip spacing is one of the more severe issues for single exposure patterning. For the 40 nm pitch vertical lines, an 18 nm nominal tip-to-tip drawn gap led to a genuine tip-to-tip distance of 29 nm with OPC , while for 32 nm pitch horizontal lines, the tip-to-tip distance with a…